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| ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features * High forward current, Low capacitance. * Ultra small Flat Package (UFP) is suitable for surface mount design. Outline Cathode mark Mark 1 2 1. Cathode 2. Anode Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Average forward current Junction temperature Storage temperature Symbol VR Io Tj Tstg Value 3 30 125 -55 to +125 Unit V mA C C Electrical Characteristics (Ta = 25C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability Symbol VR IR IF C -- Min 3 -- 35 -- 30 Typ -- -- -- -- -- Max -- 50 -- 0.85 -- Unit V A mA pF V Test Condition IR = 1 mA VR= 0.5 V VF= 0.5 V VR = 0.5 V, f = 1 MHz Both forward and reverse *C=200pF , direction 1 pulse. * Failure criterion ; IR 100A at VR =0.5 V HSC276 10 -2 10 -2 Forward current I F (A) 10 -4 Reverse current I R (A) 0 0.3 0.1 0.2 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 0.4 10 -3 10 -3 10 -4 10 -5 10 -5 10-6 10 -6 0 1 4 3 2 Reverse voltage VR (V) 5 Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSC276 Package Dimensions Unit: mm Cathode Mark C2 1.2 0.10 1.6 0.10 0.3 0.05 0.8 0.10 1 Cathode 2 Anode 0.6 0.10 HITACHI Code JEDEC Code EIAJ Code Weight (g) UFP -- SC-79 0.0016 |
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